Oxilith - Photolithographic Dielectrics

Patterned oxide formation is one of four fundamental processes in semiconductor fabrication. Unfortunately it is also one of the most dangerous and environmentally unfriendly processes, especially when using wet etching methods to form the required structures. This is where OXILITH comes to the rescue.

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OXILITH is our negative photopatternable solution for creating patterned dielectric silicon oxide layers. Using our proprietary formulation, OXILITH forms a robust, high-quality SiO₂ film through a UV-curable process, eliminating the need for hazardous HF etching.

 

The result is a dielectric that combines superior mechanical strength with excellent electrical properties.

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Product Overview:

• UV Dielectrics (i-Line @ 365 nm Exposure):

  • Designed to yield a dense SiO₂ film with excellent adhesion and dielectric performance when annealed at moderate temperatures.

 

Key Benefits:

• Eliminates HF etching with a fully photopatternable process

• Superior film uniformity, adhesion, and mechanical strength

• Low thermal budget with high-quality SiO₂ formation

• Adaptable to 0.5 micron process nodes.