Oxilith – Photolithographic Spin-On Dielectrics

Patterned oxide formation is one of four fundamental processes in semiconductor fabrication. Unfortunately it is also one of the most dangerous and environmentally unfriendly processes, especially when using wet etching methods to form the required structures. This is where Oxilith comes to the rescue.

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Oxilith is our advanced solution for creating patterned dielectric silicon oxide layers. Using our proprietary formulation, Oxilith forms a robust, high-quality SiO₂ film through a UV-curable process—eliminating the need for hazardous HF etching. The result is a dielectric that combines superior mechanical strength with excellent electrical properties.

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Product Variants:

• UV Dielectrics (365 nm Exposure):

  • Designed to yield a dense SiO₂ film with excellent adhesion and dielectric performance when annealed at moderate temperatures.

• DUV Dielectrics (248 nm Exposure):

  • Optimized for deep-UV lithography, achieving rapid curing and superior crosslink density, resulting in uniform, high-performance dielectric layers.

 

Key Benefits:

• Eliminates HF etching with a fully photopatternable process

• Superior film uniformity, adhesion, and mechanical strength

• Low thermal budget with high-quality SiO₂ formation

• Adaptable to both UV and DUV lithography systems